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| SSM9435 Elektronische Bauelemente -6A, -30V,RDS(ON) 50m[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSM9435 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. SOT-223 Features * Simple Drive Requirement * Fast Switching Characteristic * Lower On-Resistance D REF. A C D E I H Date Code 9435 G G D S Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 S Millimeter Min. Max. 13TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 oC ID@TA=70 C IDM PD@TA=25 C o o Ratings -30 25 -6.0 -4 ..8 -20 2.7 0.02 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 45 Unit o C/W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSM9435 Elektronische Bauelemente -6A, -30V,RDS(ON) 50m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj= 70 C ) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. - 30 _ Typ. _ - 0.02 _ _ _ _ _ _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS=25V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=- 5.3A VGS=-4.5V, ID=-4.2A o _ -1.0 _ _ _ _ -3.0 100 -1 -25 50 100 16 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m [ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 9.2 2.8 5.2 11 8 25 17 507 222 158 10 nC ID=-5.3A VDS=-24V VGS=-4.5V _ _ _ _ VDD=-15V ID=-1A nS VGS=-10 V RG=6 [ RD=15 [ 912 _ _ pF VGS=0V VDS=-15V f=1.0MHz _ _ S VDS=-10V, ID=-5.3A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Change Symbol VSD Trr Min. _ _ Typ. _ Max. -1.2 _ _ Unit V nS nC Test Condition IS=-2.3 A, VGS=0V. IS=-5.3 A, VGS=0V. dl/dt=100A/us 29 20 Qrr _ Notes: 1. Pulse width limited by Max. junction temperature. 300us, dutycycleO2%. 2.Pulse widthO 2 o 3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSM9435 Elektronische Bauelemente -6A, -30V,RDS(ON) 50m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SSM9435 Elektronische Bauelemente -6A, -30V,RDS(ON) 50m[ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 12 /W Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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